Total Ionizing Dose Hardening of 45 nm FD-SOI MOSFETs Using Body-Tie Biasing
The total ionizing dose (TID) effect is a problematic concern in fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor transistors (MOSFETs) because of the introduction of the thin buried baby lock spirit embroidery machine price oxide layer.The device performance is degraded by the radiation-induced trapped charges in the oxide, w